1994. 3. 23 1/2 semiconductor technical data kta1241 epitaxial planar pnp transistor revision no : 0 strobo flash application. high current application. features h fe =100 320 (v ce =-2v, i c =-0.5a). h fe =70(min.) (v ce =-2v, i c =-4a). low collector saturation voltage. : v ce(sat) =-0.5v (i c =-3a, i b =-75ma). high power dissipation : p c =1w. maximum rating (ta=25 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 2 5 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 ) note : h fe classification o:100 200, y:160 320 characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -8 v collector current i c -5 a base current i b -0.5 a collector power dissipation p c 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-8v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -20 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -8 - - v dc current gain h fe (1) (note) v ce =-2v, i c =-0.5a 100 - 320 h fe (2) v ce =-2v, i c =-4a 70 - - collector-emitter saturation voltage v ce(sat) i c =-3a, i b =-75ma - - -0.5 v base-emitter voltage v be v ce =-2v, i c =-4a - - -1.5 v transition frequency f t v ce =-2v, i c =-0.5a - 170 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 62 - pf
1994. 3. 23 2/2 kta1241 revision no : 0
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